Transparent conductive film
In recent years, researchers at home and abroad have conducted in-depth research on equipment, processes, surface modification of thin films, design and preparation of multilayer film systems. For example, Wu Wen-Fa et al. used an RF magnetron sputtering process to prepare a thickness of 250 mm on an unheated polycarbonate (PC) substrate, and a resistivity of 6 × 2 (Ω·cm). 74%~90%; Park Sung Kyu et al. used RF magnetron sputtering to prepare 110nm ITO on low temperature polymer PES, the sheet resistance was 20O/□, the transmittance was 80%, but the surface roughness was large; France David et al., using an In-Sn alloy target, the ITO film deposited on the polymer at 100 ° C has a transmittance of 85%, a resistivity of ~0.003 Ω·cm, and a surface roughness of 15-50. Daeil.KIM, USA The ITO film prepared by direct metal ion beam deposition (DMIBD) method at 70 ° C has a maximum transmittance of 85%, a minimum resistivity of 4 × Ω · cm, and a relatively high surface quality. In addition, some researchers have utilized Pulsed laser deposition (PLD), electron beam thermal evaporation and metal ion assisted sputtering are used to prepare high quality plastic-based films at low temperatures or even at room temperature. Jia Yongxin of China has prepared an ITO film with a transmittance of about 80% under the condition of 150 ° C substrate, but there is no report on the resistance and surface characteristics. In recent years, Li Yufeng et al. used a microwave plasma-assisted method to deposit on a 120 ° C substrate. The film transmittance is greater than 85%, but the sheet resistance is greater than 100O/□, and the surface characteristics are not reported; the ray is prepared on a plastic substrate at 80°C-100°C, and the transmittance is greater than 84%. ~ 0.001 order of film. In summary, the research on the preparation of ITO film at low temperature and especially normal temperature in China is not enough and not comprehensive enough; and the research preparation method is relatively single, and there is a big gap with foreign countries. In recent years, foreign countries, especially Japan and South Korea, have conducted in-depth research on low-temperature deposition technology, thin film growth mechanism and surface modification of thin films, and have been prepared under low temperature or even room temperature conditions without causing damage to the film substrate. An ITO film having a film resistivity of less than 5 × Ω·cm, a transmittance of more than 85%, and a surface roughness of less than 2 nm.